W9412G6IH
9.6
AC Characteristics and Operating Condition
SYM.
PARAMETER
MIN.
-4
MAX.
-5/-5I
MIN. MAX.
-6/-6I
MIN. MAX.
UNIT
NOTES
t RC
t RFC
Active to Ref/Active Command Period
Ref to Ref/Active Command Period
48
60
50
70
54
70
t RAS
Active to Precharge Command Period
40
70000
40
70000
42
100000
nS
t RCD
t RAP
Active to Read/Write Command Delay Time
Active to Read with Auto-precharge Enable
16
16
15
15
18
18
t CCD
t RP
t RRD
t WR
Read/Write(a) to Read/Write(b) Command
Period
Precharge to Active Command Period
Active(a) to Active(b) Command Period
Write Recovery Time
1
16
12
12
1
15
10
15
1
18
12
15
t CK
nS
t DAL
Auto-precharge Write Recovery + Precharge
Time
-
-
-
t CK
18
CL = 2
-
-
7.5
12
7.5
12
t CK
CLK Cycle Time
CL = 2.5
CL = 3
CL = 4
-
4
4
-
12
12
6
5
-
12
12
-
6
6
-
12
12
-
nS
t AC
t DQSCK
Data Access Time from CLK, CLK
DQS Output Access Time from CLK, CLK
-0.65
-0.55
0.65
0.55
-0.7
-0.6
0.7
0.6
-0.7
-0.6
0.7
0.6
16
t DQSQ
Data Strobe Edge to Output Data Edge Skew
0.4
0.4
0.4
t CH
t CL
CLk High Level Width
CLK Low Level Width
0.45
0.45
0.55
0.55
0.45
0.45
0.55
0.55
0.45
0.45
0.55
0.55
t CK
11
t HP
t QH
CLK Half Period (minimum of actual t CH, t CL )
DQ Output Data Hold Time from DQS
min
(t CL ,t CH )
t HP
-0.5
min,
(t CL ,t CH )
t HP
-0.5
min,
(t CL ,t CH )
t HP
-0.5
nS
t RPRE
t RPST
DQS Read Preamble Time
DQS Read Postamble Time
0.9
0.4
1.1
0.6
0.9
0.4
1.1
0.6
0.9
0.4
1.1
0.6
t CK
11
t DS
DQ and DM Setup Time
0.4
0.4
0.4
t DH
t DIPW
t DQSH
DQ and DM Hold Time
DQ and DM Input Pulse Width (for each input)
DQS Input High Pulse Width
0.4
1.75
0.35
0.4
1.75
0.35
0.4
1.75
0.35
nS
t DQSL
t DSS
t DSH
t WPRES
DQS Input Low Pulse Width
DQS Falling Edge to CLK Setup Time
DQS Falling Edge Hold Time from CLK
Clock to DQS Write Preamble Set-up Time
0.35
0.2
0.2
0
0.35
0.2
0.2
0
0.35
0.2
0.2
0
t CK
nS
11
Publication Release Date: Sep. 16, 2009
- 26 -
Revision A06
相关PDF资料
W9412G6JH-5I IC DDR SDRAM 128MBIT 66TSOPII
W9425G6EH-5 IC DDR-400 SDRAM 256MB 66TSSOPII
W9425G6JH-5I IC DDR SDRAM 256MBIT 66TSOPII
W947D2HBJX5E IC LPDDR SDRAM 128MBIT 90VFBGA
W948D2FBJX5E IC LPDDR SDRAM 256MBIT 90VFBGA
W949D2CBJX5E IC LPDDR SDRAM 512MBIT 90VFBGA
W971GG6JB25I IC DDR2 SDRAM 1GBIT 84WBGA
W971GG8JB-25 IC DDR2 SDRAM 1GBIT 60WBGA
相关代理商/技术参数
W9412G6JH 制造商:WINBOND 制造商全称:Winbond 功能描述:2M ? 4 BANKS ? 16 BITS DDR SDRAM
W9412G6JH-4 制造商:Winbond Electronics Corp 功能描述:8*16B DDR1 制造商:Winbond Electronics Corp 功能描述:IC DDR SDRAM 128M 250MHZ 66TSOP
W9412G6JH-5 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR SDRAM 128M-Bit 8Mx16 2.5V 66-Pin TSOP 制造商:Winbond Electronics Corp 功能描述:128M BIT DDR1
W9412G6JH-5I 功能描述:IC DDR SDRAM 128MBIT 66TSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
W9412G6JH-5TR 制造商:Winbond Electronics Corp 功能描述:128M DDR SDRAM X16 200MHZ, 65N
W942 制造商:Performance Tool 功能描述:6 Piece Hook and Pick Set 制造商:PERFORMANCE TOOLS 功能描述:6 PC HOOK AND PICK SET
W942508BH 制造商:未知厂家 制造商全称:未知厂家 功能描述:DRAM
W942508CH 制造商:WINBOND 制造商全称:Winbond 功能描述:8M x 4 BANKS x 8 BIT DDR SDRAM